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dr Tomasz Sochacki
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Affiliation:
Institute of High Pressure Physics
address:
, Warsaw, 01-142,
Poland
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Affiliation:
TopGaN Sp. z o. o.
address:
Sokolowska 29/37, Warsaw, 01-142,
Poland
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Participant:
15th Summer School on Crystal Growth - ISSCG-15
began:
2013-08-04
ended:
2013-08-10
Presented:
15th Summer School on Crystal Growth - ISSCG-15
Preparation of free-standing GaN substrates from thick GaN layers crystallized by Hydride Vapor Phase Epitaxy on ammonothermally grown GaN seeds
Participant:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
began:
2013-08-11
ended:
2013-08-16
Presented:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Preparation of free-standing GaN substrates from thick GaN layers crystallized by Hydride Vapor Phase Epitaxy on ammonothermally grown GaN seeds
Publications:
Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds
Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds
Preparation of free-standing GaN substrates from thick GaN layers crystallized by Hydride Vapor Phase Epitaxy on ammonothermally grown GaN seeds
Preparation of free-standing GaN substrates from thick GaN layers crystallized by Hydride Vapor Phase Epitaxy on ammonothermally grown GaN seeds
Semipolar and nonpolar AlGaN growth mechanisms under N-rich conditions in PAMBE
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