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- Maria G. Androulidaki

e-mail:
phone: +30-2810-394126
fax: +30-2810-394106
web:
interest(s):

Affiliation:


Microelectronics Research Group, Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, and University of Crete, Physics Department

address: , Heraklion, 71110, Greece
phone:
fax:
web:

Publications:


  1. High quality (0001) GaN films grown on diamond substrates by molecular beam epitaxy
  2. Optical properties of ZnN thin films fabricated by rf-sputtering from ZnN target
  3. InGaN and InAlN alloys grown in the entire composition range by plasma assisted molecular beam epitaxy

  4. p-type ZnO:N thin films fabricated by rf-sputtering in oxygen plasma from ZnN target
  5. The effect of PLD deposition parameters on the properties of p-SrCu2O2/n-Si diodes
  6. Thickness dependence of electrical properties of c- and a-plane InN films  
  7. Undoped and Al-doped ZnO films with tuned properties by pulsed laser deposition



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