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prof Hisashi Murakami

e-mail:
phone: +81-42-3887035
fax: +81-42-3863002
web:
interest(s):

Affiliation:


Tokyo University of Agriculture and Technology, Department of Applied Chemistry

address: 2-24-16 Naka-cho, Koganei, Tokyo, 184-8588, Japan
phone:
fax:
web: http://www.tuat.ac.jp/

Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Influence of surface orientation on the In-incorporation of HVPE-grown InGaN studied by theoretical calculations

Publications:


  1. Growth of thick InGaN by Hydride Vapor Phase Epitaxy
  2. Influence of surface orientation on the In-incorporation of HVPE-grown InGaN studied by theoretical calculations



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