Search for content and authors
 

- Igor V. Osinnykh

e-mail:
phone:
fax:
web:
interest(s):

Affiliation:


Novosibirsk State University

address: Pirogov 2, Novosibirsk, 630090, Russian Federation
phone:
fax:
web: http://nsu.ru

Affiliation:


Institute of semiconductor physics

address: Lavrentiev, Novosibirsk, , Russian Federation
phone: +7(3832)341945
fax: +7(3832)332771
web:

Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Self-compensation effect of the silicon impurity in heavily doped AlGaN layers

Publications:


  1. Self-compensation effect of the silicon impurity in heavily doped AlGaN layers



Google
 
Web science24.com
© 1998-2024 pielaszek research, all rights reserved Powered by the Conference Engine