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dr Bing Gao

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Affiliation:


Kyushu University

address: , Fukuoka, , Japan
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Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Quantitative analysis of correlations between the generation of dislocations and its influencing factors during cylindrical monocrystalline silicon growth

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Effect of cooling rate on the activation of slip systems in seed cast-grown monocrystalline silicon in the [001] and [111] directions

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Relationship between cooling flux direction and activation of slip systems of single -crystal silicon grown in [001] and [111] directions

Publications:


  1. Crystal growth of 50 cm square single crystal Si by directional solidification and its characterization
  2. Effect of cooling rate on the activation of slip systems in seed cast-grown monocrystalline silicon in the [001] and [111] directions
  3. Evaluation of numerical analysis of residual strain and dislocation density  in a multicrystalline silicon for solar cells
  4. Quantitative analysis of correlations between the generation of dislocations and its influencing factors during cylindrical monocrystalline silicon growth
  5. Relationship between cooling flux direction and activation of slip systems of single -crystal silicon grown in [001] and [111] directions
  6. Study of the effect of doped nitrogen and aluminum on polytype stability during PVT growth of SiC using 2D nucleation theory



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