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dr Daniela Gogova

e-mail:
phone: +49-30-63922841
fax: +49-30-63923003
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interest(s):

Affiliation:


Leibniz Institute for Crystal Growth

address: Max-Born-Str 2, Berlin, 12489, Germany
phone:
fax:
web:

Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

A study on n-type doping of β-Ga2O3 layers grown by MOCVD

Publications:


  1. Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN
  2. A study on n-type doping of β-Ga2O3 layers grown by MOCVD



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