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dr Charles Renard

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Affiliation:


Université Paris-Sud, Institut Électronique Fondamentale

address: Bâtiment 220, Orsay, 91405, France
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Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Dislocation and antiphase domain-free microscale GaAs crystals grown on SiO2 from (001) and (111) Si nano-areas

Publications:


  1. Dislocation and antiphase domain-free microscale GaAs crystals grown on SiO2 from (001) and (111) Si nano-areas



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