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Jacek Baranowski
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Affiliation:
Warsaw University, Faculty of Physics
address:
Hoża 69, Warszawa, 00-681,
Poland
phone:
+48 22 5532123
fax:
+48 22 6252336
web:
http://www.fuw.edu.pl
Affiliation:
Institute of Electronic Materials Technology
address:
Wólczyńska 133, Warszawa, 01-919,
Poland
phone:
22 835 30 41
fax:
22 834 90 03
web:
http://www.itme.edu.pl
Participant:
E-MRS Fall Meeting 2003
began:
2003-09-15
ended:
2003-09-11
Presented:
Participant:
E-MRS Fall Meeting 2004
began:
2004-09-06
ended:
2004-09-10
Presented:
Participant:
Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth
began:
2007-05-20
ended:
2007-05-24
Presented:
Participant:
Warsaw and Karlsruhe Nanotechnology Day
began:
2011-09-22
ended:
2011-09-22
Presented:
Warsaw and Karlsruhe Nanotechnology Day
Graphene epitaxy by chemical vapor deposition on SiC.
Participant:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
began:
2013-08-11
ended:
2013-08-16
Presented:
Publications:
2D and 3D growth mode of nitride layers
Electroreflectance and photoreflectance studies of AlGaN/GaN heterostructure with a QW placed inside AlGaN layer
Graphene epitaxy by chemical vapor deposition on SiC.
Influence of SiC substrate orientation on epitaxial graphene quality studied by Raman spectroscopy
Light induced contrast in Kelvin Force Microscopy of GaN epilayers
Optical Detection of 2DEG in GaN/AlGaN Structures - High Magnetic Field Studies
Pinned and unpinned epitaxial and sublimated graphene on SiC
Raman spectroscopy of single and multilayer graphene on SiC substrates
Recombination Dynamics in GaN/AlGaN Low Dimensional Structures Obtained by SiH_4 Treatment
Spontaneous Superlattice Formation in MOCVD Growth of AlGaN
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