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dr Sergey N. Nesmelov

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  1. Capacitance-voltage characteristics of MIS-structures in base on graded-band MBE Hg1-xCdxTe at passivation epitaxial grown in situ CdTe
  2. Energy-band diagrams and capacity-voltage characteristic of CdxHG1-xTe-based variband structures calculated with taking into account the dependence of electron affinity on the composition
  3. The influence of near-surface graded-band layers on electrical properties of MIS-structures in base on MBE HgCdTe



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