Polarised absorption and emission measurements, carried out at 5 and 300 K are presented. Results obtained were used to determine the energetic structure of thulium levels within the 4f^N ground electronic configuration.

Emission located in the visible and near infrared (650 and 790 nm) characterises the system under study. The attention was put on luminescence dynamics. The time evolution of the emission intensity from the³H₄ and ¹G₄ thulium luminescent states was investigated at low and room temperature. Luminescence decay curves are presented. Experimental lifetimes of thulium luminescent levels are compared with those in other Tm³⁺-doped systems.

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