Recent developments in the fields of integrated circuits, CD technology, and of transmission of large volume information resulted in still growing interest in optical and spectral properties of silicon - related materials, in particular produced basing on single crystalline Czochralski grown silicon, Cz - Si. Electronic states related to the presence of structural defects and impurities in Cz-Si - related materials [1] are still intensively investigated.

In the presented work, Cz - Si samples prepared by implantation with hydrogen (Si:H) or oxygen (Si:O), and processed at up to 1400 K (HT) under enhanced hydrostatic pressure in argon atmosphere (HP, up to 1.2 GPa) have been investigated. It has been shown that the HT - HP treatment of implanted samples leads to the formation of nano - clusters. The nano - dimensional structure formation in the samples results in turn in essential changes of optical and spectral properties, being dependent on the HT - HP processing parameters.

The mechanism and nature of nano - dimensional structure formation in implanted single crystalline silicon, especially in Si:H, subjected to complex processing [2, 3], and the effects of HT – HP treatment on spectral characteristics of Si:H and Si:O are discussed. Usefulness of such materials for producing of sensors has been demonstrated.

1. A. Misiuk, B.M. Efros. Pressure-induced transformations during annealing of silicon implanted with oxygen: Physics and Technology High Pressure, 16 (2006) 49.
2. A.M. Prudnikov, A. Misiuk, I.E. Tyschenko, B.M. Efros. Solid state transitions investigations in DAC by spectroscopy methods: Defect and Diffusion Forum, 208-209 (2002) 315.
3. W. Wieteska, W. Wierzchowski, W. Graeff, A. Misiuk, A. Barcz, L. Bryja, V.P. Popov: Acta Phys. Polon. A, 102 (2002) 239.

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1. Structural transformations of GaMnAs layer annealed under enhanced hydrostatic pressure
2. Microstructure of silicon implanted with transition metals
3. Structure of Si:Mn annealed under enhanced stress conditions
4. Optical and Spectroscopy of nanosized system on Si base after implantation and thermal treatment under enhanced hydrostatic pressure
5. Substructure of the metal nanomaterials after the intensive external influence
6. Effect of high pressure annealing on defect structure of GaMnAs
7. Nanotechnologies, structure and properties of magnetoresistive nanopowder pressings, mesostructured ceramics and nanostructured thin film prepared from La_0.6Sr_0.3Mn_1.1O₃
8. Observation of defects in g - irradiated Cz-si annealed under high pressure
9. Effect of stress on structural transformations in GaMnAs
10. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
11. Structure and Magnetization of Defect-Associated Sites in Silicon
12. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
13. Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure
14. Buried nano-structured layers in high temperature-pressure treated Cz-Si:He
15. Defect structure of silicon crystals implanted with nitrogen - a study of Si:N annealed under high hydrostatic pressure.
16. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
17. Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells
18. Features of Twist Extrusion: Method, Structures & Material Properties
19. Influence of substrate miscut angle on dislocation density in GaAs/Si heterostructures obtained by HRXRD
20. Structural and optical properties of high temperature and high pressure treated Si:H,D
21. Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods
22. Thermoelectric power of Czochralski silicon containing electrically active oxygen nanoclusters
23. Effect of the DAC treatment on the nanomaterials of type Si-O
24. Intensive Plastic Deformations under Hydromechanical Twisting and Packet Hydrostatic Extrusion
25. Solid State Transitions Investigations in DAC by Spectroscopy Methods