The most common compounds user for polishing indium based, AIIIBV semiconductor (InAs,InP,InSb) are based on bromine with methanol. Measurements by Atomic Force Microscope (AFM) and X-ray Photoelectron Spectrometer (XPS) demonstrate negative influence of bromine on microgeometry and chemical purity of surface of standard InAs substrates (2" diameter; 400±25μm in thickness). As a superior alternative to bromine polishing we introduced two slurry system using acidic and alkaline reagents, simultaneously but separately applied on a polishing pad. With this method InAs substrates with Ra=0.1 nm of roughness and high chemical purity were obtain.. The epi-layer test of such substrates, made by Hamamatsu-Japan, confirmed epi-ready status for wafers.

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