ELO (Epitaxial Lateral Overgrowth) is a method of epitaxial crystallization on partially masked crystalline substrate by dielectric layers. Before the growth the substrate is covered with the thin dielectric film and patterned by means of photolitography technique in order to form silicon opened windows. In the next step the epilayers are deposited, growing laterally and vertically over the dielectric cover. The main advantage of such an approach is that the masking film prevents the defects propagation present in substrate into the ELO layer. Such a method of crystallization allows to use the poor quality substrate in application to many electronic devices, especially for solar cells [1], diminishing the costs of their production. The morphology of the grown ELO epilayers depends on various factors, such as: crystallographic orientation of the substrate, type of technology, atmosphere in which the growth occurs, pattern of the mask, etc. [2].

This work presents the new results of analysis of the dynamic of crystallization of Si -ELO layers, obtained by means of Liquid Phase Epitaxy (LPE). LPE is the most suitable method of epilayers crystallization for PV applications because of economical reasons.

The investigated Si-ELO layers ware grown in various conditions: using standard horizontal LPE apparatus as well as vertical one with the temperature gradient, various solvents and various P-t regimes.

[1] – J.M. Olchowik, Polish Patent Nr P.339396 (2006).

[2]. I. Jozwik, J.M. Olchowik, The epitaxial lateral overgrowth of silicon by two-step liquid phase epitaxy, J. Cryst. Growth 294 (2006) 367-372.

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