GaN has recently emerged as an important semiconductor for opto-electronic applications in light emitters and detectors. However, one of the serous problems impeding high quality GaN growth is the lack of a suitable lattice matched substrate. Sapphire is normally used as substrate to grow GaN, but lattice mismatch (GaN/Sapphire=15%) and difference in the thermal expansion (GaN/Sapphire=25.5%) between GaN and sapphire deteriorates the device performance and reduced its life-time. In order to provide an effective solution to this problem, the ideal situation would be the use of GaN substrate because of no difference in the lattice constant and thermal expansion coefficient between GaN films and GaN substrate. Although there were several attempts to produce bulk GaN single crystal, it is very difficult to grow bulk GaN because of high temperature (1600°C) and gas pressure (10,000 atm) for GaN synthesis.

In present study, we grew β-Ga₂O₃ single crystal as a substrate by micro-pulling down (µ-PD) method for high quality GaN epitaxial growth. Even though β-Ga₂O₃ crystal does not have a hexagonal structure, hexagonal GaN can be fabricated on the surface of β-Ga₂O₃ single crystal using nitridation process. The chemical and structure characterization of β-Ga₂O₃ single crystal were confirmed by x-ray photoelectron spectroscopy (XPS) and high-resolution X-ray diffraction (HR-XRD).

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