Nanostructures semiconductors have been attracting increasing attention due to their exceptional properties, which are different from those of bulk and thin film materials. Especially, a compound, wide direct band gap semiconductor with a large exciton binding energy has received much attention due to the potential applications for the opto-electronics field. A GaN is interesting material with excellent properties. In spite of GaN good properties, the synthesis of the compound is very difficult. On the other hand ZnO was easily synthesized. Most of groups investigated vertical ZnO nanowires synthesis, using MOCVD, chemical synthesis, and anodic aluminum oxide (AAO) template method.

In this study, we grew vertical ZnO nanowires by VPE method. ZnO nanowires were synthesized at about 800-1000^oC, using ZnO and C powder source. We used Au catalyst as a seed. Especially we studied annealing effect of substrate. In case when the substrate was annealed, the ZnO nanowires were synthesized vertically on the substrate. We confirmed hexagonal ZnO nanowires using XRD pattern. The shape of nanowires was examined by SEM and TEM. The chemical composition of nanowires was analyzed by EDX with high resolution.

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