The transparent conductive oxide films have been attractive significant attention in optoelectronic devices such as organic and inorganic electroluminescence diodes (OLED, LED), and photovoltaic cells (PV). Impurity doped ZnO thin layers have been widely used in solar cells and electroluminescence devices because of their higher thermal stability, non-toxic nature, low price, easy fabrication and good electrical and optical behaviour, compared with other oxide materials such us ITO, SnO₂ and others .

In this paper, pure zinc oxide and X (X=Al, Mg, In, Ce, Er)-doped zinc oxide layers were deposited on glass and (111) Si substrates by reactive chemical pulverisation spray pyrolysis and dip couting (sol-gel) technique using zinc and X (X=Al, Mg, In, Ce, Er) chlorides as precursors. The effects of X concentration on the structural, electrical and optical properties of ZnO:X thin layers were investigated in detail. These films were characterized by X-ray (XRD) scaning electron microscopy (SEM), atomic force microscopy (AFM), fotoluminescence, DC and AC electrical conductivity measurements.

All deposited ZnO and ZnO:X layers at 725 K are polycrystalline and indicate highly c-axis oriented structure. The dimension of crystallites depends on incorporation of dopant atoms (X) into the ZnO layers. The photoluminescence spectra of the layers have been studied as a function of the deposition parameters such as doping concentration, temperature of substrate and post grown annealing. The photoluminescence spectra were measured at the temperature range from 13 K to 320 K.

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