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Optical and electrical characterization of kdp doped PbI2 single crystal

Mohd Shkir 

Jamia Millia Islamia (JMI), Jamia Nagar,new delhi, Delhi 110025, India

Abstract

The PbI2 material was purified using the vacuum zone refining technique, this technique was fabricated in our crystal growth laboratory. This material was grown as single crystal by using this technique. The conductivity and band gap was measured by using UV/VIS spectrophotometer; the band gap was measured as 2.5eV of purified material. The KDP was doped as 1-4% w/w in PbI2 purified material. After doping of the pure KDP in vacuum zone refining material, the conductivity was also measured. We found that the conductivity increased after doping. The band gap of doped material was also measured using UV/VIS spectrophotometer, which decrease. The Growth mechanism was also studied after doping, the dendritic behavior of crystal was observed with the doping of KDP. After 4% doping of KDP dendritic behavior of crystal is changed.

 

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Presentation: Poster at Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth, by Mohd Shkir
See On-line Journal of Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Submitted: 2007-01-10 07:27
Revised:   2009-06-07 00:44