The development of electronic devices involves a variety of technologies including laser-assisted doping of materials. However, laser irradiation can induce severe damage of the electronic materials, changing the structure by phase segregation and promoting defect migration and aggregation. So it is very important to know the extent and relevance of such side effects.
CdTe is a wide band gap semiconductor largely used in photonic applications such as radiation detectors and solar cells. In this work we show that laser irradiation of CdTe induces significant structural modifications localized in a thin surface layer. The relationship between laser power density, local temperature and structural changes is discussed by monitoring the relative intensity of the Te modes in Raman spectra. Local temperature is measured through the anti-Stokes/Stokes ratio of the same modes. We also show that the surface decomposition occurs at temperatures well below the melting point.

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