Energy transfer to Er3+ ions in silicon-rich-silicon-oxide: efficiency lamitations.

Dmitry Kuritsyn 2A Kozanecki 2H. Przybylinska 2W Jantsch 1

1. Institut für Halbleiterphysik Universität Linz, Altenberger Str. 69, Linz A-4040, Austria
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland

Abstract

A detailed investigation of the excitation mechanisms of the 4I13/2-4I15/2 intra-4f-shell luminescence of Er3+ ions near 1.5 μm in silicon-rich silicon oxide (SRSO) is reported. SRSO:Er was produced by high dose implantation of Si+ ions into SiO2 layers grown on silicon, followed by Er+ implantation at an energy of 800 keV. Samples were thermally annealed up to 1100oC to create different types of defects and Si-nanocrystals (nc-Si). Photoluminescence excitation (PLE) spectra were obtained using optical parametric oscillator (OPO) and Ti:Sapphire laser in the range 420-680 and 720-830 nm, respectively.
The results show that in SRSO:Er two mechanisms of excitation are in competition: a resonant one and via defects. The resonant channel of excitation of Er3+ 4f-shell which gives a maximum luminescence yield for Er doped silica without additional Si is suppressed by the silicon excess related defects; resonant peaks disappear with increasing of annealing temperature of SRSO. We suggest that the dominant factors, which limit the excitation efficiency of Er3+ in SRSO, are distance dependence of the transfer rate and little spectral overlap of the interacting states. Employing density of states function for nc-Si, Er3+ absorption function and spectral overlap integral, the quantitative estimation of overall efficiency of the system nc-Si:Er3+ for multipole interaction between localized in nc-Si (or nc-Si/SiO2 interface) e-h pairs and 4f-states of Er3+ is presented. The dependence of the Er3+ emission on excitation duration were also studied. For one electron-hole pair being generated by excitation pulse we show that one nc-Si can excite only one or less of Er3+ ions in its vicinity.

 

Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: http://science24.com/paper/864 must be provided.

 

Related papers
  1. Electronic and optical properties – As and As+Sb doped ZnO grown by PA-MBE
  2. Grown ZnMgO/ZnO/ZnMgO heterostructures on p-type Si(111) by MBE method
  3. Dual-acceptor doped p-ZnO:(As+Sb)/n-GaN heterojunctions grown by PA-MBE as a highly selective UV detector
  4. Compensation mechanisms in magnesium doped GaN
  5. Studies of symmetry of erbium centers in GaN.

Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Dmitry Kuritsyn
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-26 17:01
Revised:   2009-06-08 12:55