In order to realize controlled p-type doping in ZnO it is absolutely necessary to control and understand the role of point and extended defects in the epitaxial films. This starts with the choice of the substrate since for sapphire and GaN on sapphire substrates there is a severe contamination by diffusion of the group III elements in the ZnO films. However, also the choice of a ZnO substrate matters. In the first part of the talk we address to the properties of the ZnO substrates in terms of crystallinity, surface morphology and preparation, polarity etc. Secondly, we report on the homoepitaxial growth and demonstrate the influence of the II/VI ratio on the electrical and optical properties of the films. In the last part the doping with Li, Na and P from the evaporation of solid precursors will be presented and discussed.

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1. Electrodeposition of ZnO hybrid layers – role of molecular adsorbates and substrate structure on a way towards efficient photoelectrodes