The work is aimed of the theoretical and experimental investigations on the management possibilities of the laser beam processing of semiconductor crystals (Cd,Hg)Te.
The nonlinear mathematical model of the laser beam heating process was developed, when millisecond pulses of ruby laser were used. The constructed nonlinear model allowed to determine the dynamics of heating and melting process in material, depending on energetic and space-time characteristics of pulse laser radiation.
Distribution of the extended structural defects in (Cd,Hg)Te crystal near-surface layers and micro-sections was determined.
The increased density of structural defects being formed by laser treatment in the near-surface region of the (Cd,Hg)Te samples leads to the essential reduce of the survival time of the current carriers in the very region. The considerable reduce of the survival time of the unstable current carriers in the defective zone creates the conditions for the origin of the magneto-concentrated effect in the intersecting electric and magnetic fields. The Lorentz force deflects the current carriers towards the surface with the increased rate of recombination. This leads to the growth of electrical resistance in the samples.
The following structures have been examined: the n-(Cd,Hg)Te base - the p-(Cd,Hg)Te modified with laser irradiation; the p-(Cd,Hg)Te base with different concentration of the holes - the modified layer p-(Cd,Hg)Te. These samples had one surface treated by ms-width laser pulse with level of its energy close to the threshold. In magnetic fields 1.8 Tl we have determined an essential discrepancy in the Volt-Ampere characteristics of the samples. This discrepancy depends on the direction of the magnetic field. The influence of the thickness of the base and the ratio of the concentration of the majority carriers in the layers over the magneto-concentrated effect has been investigated.

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