GaN and ZnO are good examples of a diluted magnetic semiconductor (DMS) that is classified as a wide band gap material has attracted much attention. P-type GaN:Zn epilayers were prepared by metalorganic chemical vapor deposition and subsequently implanted with Fe⁺ of 5 and 10 at %. In the case of the Fe concentration of 5%, the magnetic properties of all epilayers show paramagnetic behavior. These results agree with those that the triple axis diffraction (TAD) of X-ray diffractometry (XRD) do not produce the ferromagnetic GaFeN domain and the Fe-related PL transitions happen very weakly, and also atomic force microscopy (AFM) and magnetic force microscopy (MFM) images do not reveal clear, symmetric ferromagnetic domains. However, the systematic enhancement of ferromagnetic hysteresis loops takes place with an increase in the Fe concentration (5→10 at%) and in the annealing temperature from 700 to 850 ^oC. The trends of magnetic properties coincide with those of results that the full width at half maximum of triple axis diffraction for GaN (0002) including the appearance of ferromagnetic GaFeN domain increases and the Fe-related photoluminescence transitions enhance, and also the sizes of symmetric ferromagnetic domains in AFM & MFM increases systematically

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