The studies of physical processes in zero-dimensional heterostructures occupy a particular position, because the unique fundamental properties which are not inherent to massive crystals can be observed in such systems. Nanostructures were successfully used in opto- and microelectronics during last years.

The basic physical characteristics of nanoobjects (the baric coefficient, Young's modulus, Poisson's ratio) are accepted in the majority of theoretical models to coincide with the corresponding characteristics obtained from macroscopical experiments. However, if the described structures contain a few nuclear layers, the physical characteristics of nanostructures appreciably differ from the corresponding characteristics of bulk crystals. In particular, a discrepancy between the values of the baric coefficient of the InAs quantum dots (QDs) in an InAs/GaAs heterostructure and in a bulk InAs crystal is observed. The results of experimental researches show that the value of the InAs-QD baric coefficient differs from that of the bulk InAs crystal by about 30-40%. The aim of this work is therefore to calculate the dependence of the QD baric coefficient on its dimensions in the framework of the deformation potential model.

The results of calculations for the InAs/GaAs heterosystem with InAs QDs:

The value of the baric coefficient for the spherical QD of the radius 4.5nm equals 9.45meV/kbar provided the plate thickness of the surrounding matrix 50nm. This means that the value of the InAs-QD baric coefficient is smaller than that of the bulk InAs crystal by 21%. An increase of the energy of the transition into the ground state results in a linear growth of the baric coefficient. The increase of the QD radius stimulates the opposite effect: the baric coefficient diminishes.

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