In the past decade, much effort has been made in fabricating semiconductor nanostructures, including nanorods on different material bases, including ZnO. Due to its wide band gap (3.37 eV) alongside many fascinating properties of this material, ZnO is a potential candidate for light-emitting devices in the blue and ultra-violet (UV) region of the electromagnetic spectrum. While much success has been reported on the fabrication of ZnO nanostructures, the fabrication of device structures from these nanostructures has rather proven to be challenging. With the persistent difficulties in incorporating acceptors in ZnO, quantum well structures will provide a dependable alternative for achieving lasing on ZnO basis. With their anticipated high crystalline quality, densely packed nanostructures would provide a possibility for high device density.

We have fabricated ZnO anorod-based single quantum well heterostructures in a two-step process. Nanorods were first grown at 800° C and 20 mbar reactor pressure using a vapour transport system [1]. Then ZnO/Zn_xMg_1-xO heterostructures were grown on the nanorods using a modified Varian Gen II molecular beam epitaxy system. The nanorods grow preferentially along the c-axis of ZnO and exhibit, besides peculiar optical properties, a very narrow rocking curve full width at half maximum of 0.23°. Quantum confinement was clearly observed within the ZnO wells of different widths (1-5 nm). These quantum wells show relatively narrow photoluminescence peaks of full width at half maximum less than 40 meV.

Details of the fabrication and characterisation processes shall be presented.

Rerence:

[1] A. C. Mofor, A. S. Bakin, A. Elshaer. D. Fuhrmann, F. Bertram, A. Hangleiter, J. Christen and A. Waag: phys. stat. sol. (c) 3, No. 4, p. 1046 (2006)

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