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Sb-treatment effect of GaAs substrate on CdTe growth by MOVPE

Hideo Goto ,  Masahiro Tahashi ,  Toshiyuki Ido 

Chubu UNIVERSITY, Department of Electrical Engineering, 1200 Matsumoto-cho, Kasugai, Aichi 487-8501, Japan

Abstract
CdTe is an attractive matrial, because of its wide application field, for example, the X-ray detector, the solar cell, the diluted magnetic semiconductor and so on. It is necessary to obtain high-quality materials in order to realize such devices. We reported the Sb-treatment of GaAs substrate is effective to obtaining high-quality Cd1-XMnXTe (CMT) film on (100)GaAs by metal-organic vapor phase epitaxy (MOVPE).1) We will disscuss the phenomena at the interface of the GaAs substrate and the CdTe layer concerning to the Sb-treatment and the relation between the Sb-treatment conditions and the quality of CdTe grown on it.

A CdTe film was grown on a (100)GaAs substrate by MOVPE method under atmospheric pressure. Dimethyl cadmium (DMCd), diethyl telluride (DETe) and triethyl antimony (TESb) were used as the source gases for cadmium, tellurium,and antimony, respectively. H2 was used as the carrier gas. The substrate was heated on the graphite susceptor induced by RF irradiation. Prior to the growth of CdTe, the GaAs substrate was heated in H2 introducing TESb for 15 min(Sb-treatment). The TESb supply rate was varied from 0 to 3 μmol/min and the temperature of the GaAs substrate was varied from 500 to 650oC, to elucidate the effect of TESb treatment. After the TESb treatment, the CdTe film was grown for 2 hours. The typical growth conditions of CdTe are presented in the previous paper1).

The CdTe film grown on (100)GaAs substrate treated with TESb of 3μmol/min was high-quality, featureless and free from cracks. The X-ray diffraction shown in Fig.1 suggests that the formation of Sb layer and/or GaSb layer at the interface is important to obtain featureless CdTe film on GaAs substrate.

1) H. Goto, S. Sawada, M. Tahashi, T. Ido : Jpn. J. Appl. Phys. 44 (2005) 146

 

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Related papers

Presentation: Poster at E-MRS Fall Meeting 2006, Symposium F, by Hideo Goto
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-05-12 09:55
Revised:   2009-06-07 00:44