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High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure

Kalju Lott 1Svetlana Shinkarenko 1Olga Volobujeva 1Leo Türn 1Tiit Nirk 1Andres Öpik 1Märt Nõges 1Reet Nisumaa 2Urve Kallavus 2Valdek Mikli 2Mart Viljus 2Elena Gorokhova 3Galina Ananeva 3Andrei Grebennik 4Anatoli Vishnjakov 4

1. Tallinn University of Technology, Department of Materials Science, (TUT), Ehitajate tee 5, Tallinn 19086, Estonia
2. Tallinn University of Technology,Centre for Materials Research (TUT), Ehitajate tee 5, Tallinn 19086, Estonia
3. S.I. Vavilov State Optical Institute, St-Petersburg, Russian Federation
4. D.I.Mendeleyev University of Chemical Technology of Russia (MUCTR), Miusskaya sq. 9, Moscow 125047, Russian Federation

Abstract

There are differences in In-doping mechanisms of II-VI compounds. Doping with In-dopant of some compounds gives rise to large concentrations of donors, but often the electron concentration is a small fraction of the donor concentration as a result of self-compensation with formation of complex. In this report high temperature electrical conductivity (HTEC) isotherms and isobars of ZnSe:In and of CdSe:In are compared to construct the high temperature defect equilibrium (HTDE) models of these systems as we made earlier for II-VI systems doped with Al and Ga [1,2]. When HTEC isotherms and isobars of ZnSe:In and of CdSe:In, measured under metal component vapour pressure give both n-type conductivity then differences appear in the measurements under the selenium vapor pressure. Measured at the last conditions ZnSe:In HTEC isotherms are characterized by the conductivity type conversion but no change of HTEC type is observed on CdSe:In isotherms. Under these conditions the activation energy for ZnSe:In isobars is ΔE = 1.3 - 1.6 eV and for CdSe:In is ΔE = 1.3eV. The onefold ionized substitutional In at metal component place is proposed to be compensated by native defects in ZnS:In and in CdSe:In at high selenium component vapour pressure. The native defect for compensation may be onefold ionized zinc vacancy for ZnSe:In and twofold ionized zinc vacancy for CdSe:In. Defect associations occur at lower temperatures. HTDE models under selenium component vapor pressure conditions are presented and compared.

[1] K. Lott, T. Nirk, and S. Shinkarenko, Solid State Ionics, 173 (2004) 83.

[2] K. Lott, T. Nirk, O. Volobujeva, S. Shinkarenko, L. Türn, U. Kallavus, A. Grebennik, and A. Vishnjakov, Physica B, 376-377 (2006) 764.

 

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Presentation: Poster at E-MRS Fall Meeting 2006, Symposium F, by Reet Nisumaa
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-04-13 17:39
Revised:   2009-06-07 00:44