Configurational disorder in amorphous materials is due to thermal vibration of atoms and their static displacements from equilibrium positions. These two components can be separated by means of two EXAFS experiments performed at room and low temperatures. In the present work semiconducting indium selenide amorphous films with Se content at 50, 60 and 66 at. % has been studied. Such a separation has fundamental importance for understanding of electronic and optical properties of amorphous semiconductors. The BM29 and BM32 beam lines at ESRF (Grenoble) were used to record the EXAFS spectra at room temperature and at 20K at the In and Se K-edge. The generalized Debye-Waller factors at both absorption edges for all investigated samples were derived from the EXAFS oscillations using standard processing procedures and the Marquard-Levenberg least squares method. At 20K the thermal vibrations are practically frozen out and the Debye-Waller factor is related only to static disorder, which is a source of amorphous nature. The correlations thermal-static disorder as a function of the chemical composition is disonssed.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/621 must be provided.