TiO₂ thin films were prepared by cost-effective spray pyrolysis method. The solution containing titanium(IV)isopropoxide as a titanium source, acetoacetone and ethanol was deposited onto glass or quartz slides and n-type Si(100) wafers at substrate temperatures of 275-500 C using pulsed spray solution feed.
SEM, XRD, FTIR, UV-VIS, ellipsometry and impedance spectroscopy methods were applied to characterize as-deposited and annealed films.
Homogeneous films are formed at growth temperatures of 315-500 C. Film thickness of 80-500 nm could be controlled by the substrate temperature and number of spray pulses. The formation of TiO₂ anatase films at temperatures above 300 C is proved by FTIR. As-deposited films prepared at temperatures below 450 C were amorphous, whereas crystalline films could be grown above 500 C according to XRD. TiO₂ films prepared at low temperatures contain residues of incompletely decomposed precursors as minority secondary phases. The annealing of as-deposited films at 700 C in oxygen atmosphere results in well-crystallized chemically pure anatase phase if films were deposited at substrate temperatures of 315-435 C. The films deposited at 500 C and annealed under the same conditions contain additionally rutile phase according to FTIR. The formation of interfacial SiO₂ layer is confirmed by FTIR if TiO₂ film on Si substrate is annealed at 700 C in oxygen. Annealed TiO₂ films show refractive index close 2.30 and exhibit relative dielectric constant value of 8.5 at 10 kHz.

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