For describing of properties of heterophase structures the model of orientated inclusions with variable configuration of phase inclusions have been developed and the calculations of electrical and thermoelectric properties have been performed. The results agreed with the experimental data obtained for a range of semiconductors at high pressure near phase transition points. Recently the novel technique for experimental investigations of thermomagnetic properties of semiconductor micro-samples have been developed at ultrahigh pressure up to 30 GPa.
In the present work the general equations for thermomagnetic (longitudinal and transverse Nernst-Ettingshausen effects) and galvanomagnetic (magnetoresistance, Hall effect) properties of heterophase systems on concentration and configuration of phase inclusions have been derived in the model of orientated phase inclusions. For the most important particular cases of inclusions: spherical, needleshaped, and disk shapes the simplified equations have been obtained. The relation between thermomagnetic effects and their galvanomagnetic analogues (Hall effect, magnetoresistance) have been analysed. The expressions for thermoelectric effectiveness and figure of merit (Q-factor) of heterophase systems have been derived.The results of calculations are compared with experimental data for semiconductors of VI and IV-VI Groups obtained in the vicinity of phase transitions under pressure. The approach developed is a perspective one for using in micro-device technology for quality control, characterisation, etc. and for advanced manufacturing of semiconductor
micro-devices.
The work was supported by Russian Foundation for Basic Research Gr.No.01-02-17203.

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