Ion implanted nanolayers in AlN for direct bonding with copper
|Jerzy Piekoszewski 1,2, Wiesława Olesińska 3, Jacek Jagielski 3, Dariusz Kaliński 3, Marcin Chmielewski 3, Zbigniew Werner 2, Marek Barlak 2|
1. Institute of Nuclear Chemistry and Technology (IChTJ), Dorodna 16, Warszawa 03-195, Poland
Aluminum nitride (AlN) is gaining increasing interest as an attractive substrate material for electronic applications in high power density packing owing to such features as: high thermal conductivity, good electrical insulation, thermal expansion similar to silicon and non-toxicity. The requirement of heat dissipation imposes the need of forming low thermal resistance (thin) joint with a high thermal conductivity metal, preferably copper. According to recent literature the direct bonding (DB) of the substrate to the conductor is considered as the most promising technique.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium F, by Jerzy Piekoszewski
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-05 13:50 Revised: 2009-06-08 12:55
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