Giant magnetoresistance in p-n junction composed of betaFeSi2 - Si

Koji Yamada ,  Hirohisa Ogawa ,  Zentarou Honda ,  Kiyoshi Miyake 

Saitama University, 255 Shimo-ookubo, Sakuraku, Saitama 338-8570, Japan

Abstract

We fabricated a p-n junction of p(beta FeSi2)-n(Si), so called "environmental semiconductor". Large MR of 30% in 30T at RT was obtained for a well fabricated sample. We found the optimum annealing condition of the p-n junction for the largest MR was at T=840oC, 2 hours for the deposited Fe on n-Si. Magneto-photo-transistor will be obtainable by the device in the future.

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Presentation: oral at E-MRS Fall Meeting 2005, Symposium D, by Koji Yamada
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-06-02 06:36
Revised:   2009-06-07 00:44
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