The evaluation of InN fundamental properties and parameters like band gap, effective mass values, phonon modes, etc., of both poly- and monocrystalline InN layers is a subject of permanently growing number of reports. Photoluminescence experiments are widely used to investigate the nature of the recombination processes. Applied to high concentration material the experiment is usually used for the determination of the effective optical band-gap assuming band filling and renormalization effects.
We report on a theoretical approach in which two cases of recombination in optically excited high concentration n-InN are considered: an electron occupying a conduction state can only decay to a valence state with the same wave vector, and the other, in which the probability is essentially independent of the wave vectors of the two states (no momentum conservation). The latter is applicable when the donors have random distribution in the real space. For high impurity concentrations the periodicity of the lattice is perturbed and the momentum conservation is partly lifted so that all available carriers can contribute to the total radiative recombination. The calculations are used to fit emission spectra of unintentionally doped (~1×10¹⁸ -1×10¹⁹cm^–3) InN layers studied in the temperature range 10-300K with excitation wavelength of 488 nm and recorded with PbS detector. The spectra peak at around 0.7eV and can be well fitted disregarding the momentum conservation law.

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2. The microstructure and properties of InN layers
3. In-vacancies in Si-doped InN
4. Irradiation-induced defects in InN and GaN studied with positron annihilation
5. Compositional modulation in the InxGa1-xN layers; relation to their optical properties
6. Conduction band anisotropy of InN and GaN studied by synchrotron ellipsometry
7. Surface band bending at n-type and p-type InN by Auger Electron Spectroscopy
8. Acceptor states in photluminescence of n-InN
9. Band Structure and Properties of InN and In-rich In1-xGaxN Alloys
10. Quantized Electron Accumulation, Inversion Layers and Fermi Level-Stabilization in Indium Nitride
11. Valence band structure of InN from x-ray photoemission studies
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