Quaternary In_xAl_yGa_1-x-yN multiple quantum wells (MQWs) with nominal composition x = 0.085, y = 0.285, and GaN spacers are characterized by high resolution transmission electron microscopy (HRTEM), geometric phase analysis (GPA), and energy dispersive x-ray nano-analysis in a scanning transmission electron microscope (STEM). The MQWs were grown by rf plasma MBE using metal-rich conditions and a relatively low growth temperature. Specimen preparation was performed by tripod polishing in order to minimize artifacts due to excessive ion milling. The material exhibits sharp well-defined interfaces. Indium clustering is not observed; the onset of clustering occurs only after prolonged observation under the electron beam. The GPA indicates that the quantum wells are lattice-matched to the GaN spacers. The chemical concentration profiles are obtained by de-convolution of EDX scans and confirm the chemical sharpness of the interfaces.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/3828 must be provided.

1. Epitaxial growth on porous substrates
2. Epitaxial growth on porous substrates of III-V semiconductors
3. Microstructure of InN grown on Si (111) by plasma-assisted MBE using a double buffer layer
4. The (10-10)/(2-1-12) grain boundary in nonpolar GaN:Atomic structure and influence on defect introduction
5. Interfacial structure of semipolar AlN grown on m-plane sapphire by PAMBE
6. Structural models of GaN quantum dots in semipolar AlN
7. FE and MD simulation of InGaN QD formation induced by stress field of threading dislocations
8. Study of partial dislocations in wurtzite GaN using gradient elasticity
9. Partial dislocation core distribution in GaN using high resolution transmission electron microscopy
10. Energy and electronic structure of gallium and nitrogen interstitials in GaN Tilt Boundaries
11. The atomic configuration of tilt grain boundaries around <0001> in GaN
12. Ab-initio tight-binding study of the core structures of the c edge dislocation in wurtzite GaN