Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure

Andrzej Misiuk 1Artem Shalimov 3Jadwiga Bak-Misiuk 3Barbara Surma 1,2M. Prujszczyk 1Jacek Jagielski 2,4

1. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
2. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland
3. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
4. Andrzej Sołtan Institute for Nuclear Studies (IPJ), Świerk, Otwock-Świerk 05-400, Poland


Ferromagnetic ordering in silicon implanted with Mn+ ions, Si:Mn, has been reported recently; this ordering is evidently related to the structure of Mn-enriched near surface layer of implanted material [1]. As it has been stated earlier [2], not only temperature, HT, but also hydrostatic pressure, HP, applied at processing of implanted silicon affect its properties.
The effect of treatment at HT up to 1270 K under HP up to 1.1 GPa for time, t, up to 10 h on the structure and related properties of Si:Mn was investigated in present work by X-Ray, photoluminescence, and related methods.
Si:Mn was prepared by Mn+ implantation into 001 oriented oxygen-containing Si (Fz and Cz-grown) at 160 keV to a dose 1x10(16)(cm-2); temperature of the Si substrate, T, at implantation was kept at 340 K (AMn:Si)and at 610 K (BMn:Si).
Structural properties of Mn:Si are distinctly dependent on the implantation and treatment parameters. The structure of AMn:Si (T = 340 K) treated under HP at up to 1270 K for up to 5 h remains to be strongly disturbed; no magnetic ordering has been detected in AMn:Si if treated at 1070 K - 1.1 GPa for 1 h. Contrary, an annealing of this sample at 1070 K under atmospheric pressure produces well ordered structure. The BMn:Si samples prepared at T = 610 K and treated at atmospheric pressure as well as under HP were of improved crystalographic perfection; still in treated BSi:Mn some dislocations were detected.
The effects of T, HT, HP, and t on the structure and related properties of Si:Mn will be discussed.
1. M.Bolduc, C.Awo-Affouda, A.Stollenwerk, M.B.Huang, G.G.Ramos, G.Agnello, V.P.LaBella, Phys.Rev.B 71 (2005)033302.
2. A.Misiuk, A.Barcz, J.Ratajczak, L.Bryja, J.Mater.Sci.: Electronics, 14 (2003) 295.

Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: must be provided.


Related papers
  1. Self-organized metallodielectric eutectic nanoparticle based composite material: manufacturing and properties
  2. Defect distribution along needle-shaped PrVO4 single crystals grown by the slow-cooling method
  3. Growth of SiC by PVT method with different sources of the cerium impurity, CeO2 or CeSi2
  4. The Rossendorf beamline BM20 at the ESRF: Overview and perspectives
  5. Can we control the process of room temperature ferromagnetic clusters formation in GaMnAs matrix?
  6. Structural transformations of GaMnAs layer annealed under enhanced hydrostatic pressure
  7. Microstructure of silicon implanted with transition metals
  8. Low magnetization of thick substrates – the origin of giant magnetization of thin films on top of them?
  9. Structure of Si:Mn annealed under enhanced stress conditions
  10. Optical and Spectroscopy of nanosized system on Si base after implantation and thermal treatment under enhanced hydrostatic pressure
  11. Substructure of the metal nanomaterials after the intensive external influence
  12. Effect of high pressure annealing on defect structure of GaMnAs
  13. Ultra thin silicon wafers technology for mirror application
  14. Observation of defects in g - irradiated Cz-si annealed under high pressure
  15. Effect of stress on structural transformations in GaMnAs
  16. Spectroscopy of Cz-Si samples subjected to implantation and thermal treatment under enhanced hydrostatic pressure.
  17. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
  18. Structure and Magnetization of Defect-Associated Sites in Silicon
  19. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
  20. Effect of the Annealing Atmosphere on the Quality of ZnO Crystal Surface
  21. Structure properties of bulk ZnO crystals
  22. Modification of polyethylene with high energy ions and electrons. Structural, micromechanical and dielectric studies of the surface layer.
  23. Buried nano-structured layers in high temperature-pressure treated Cz-Si:He
  24. Defect structure of silicon crystals implanted with nitrogen - a study of Si:N annealed under high hydrostatic pressure.
  25. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
  26. Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells
  27. MBE growth and characterization of InAs/GaAs for infrared detectors
  28. Defects in GaMnAs - influence of annealing and growth conditions
  29. Moessbauer spectroscopy, interlayer coupling and magnetoresistance of irradiated Fe/Cr multilayers
  30. Influence of substrate miscut angle on dislocation density in GaAs/Si heterostructures obtained by HRXRD
  31. Lattice parameters changes of GaMnAs layers induced by annealing
  32. Structural and optical properties of high temperature and high pressure treated Si:H,D
  33. Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods
  34. Micromechanical properties of nanometer-thick layers of implanted alumina.
  35. Thermoelectric power of Czochralski silicon containing electrically active oxygen nanoclusters
  36. Effect of the DAC treatment on the nanomaterials of type Si-O
  37. Ion implanted nanolayers in AlN for direct bonding with copper

Presentation: oral at E-MRS Fall Meeting 2005, Symposium D, by Andrzej Misiuk
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-28 07:05
Revised:   2009-06-07 00:44
© 1998-2022 pielaszek research, all rights reserved Powered by the Conference Engine