InGaN and InAlN alloys grown in the entire composition range by plasma assisted molecular beam epitaxy
|Eleftherios Iliopoulos 1, Alexandros Georgakilas 1, Emmanouil Dimakis 1, Adam Adikimenakis 1, Katerina Tsagaraki 1, Maria G. Androulidaki 1, Nikolaos T. Pelekanos 2|
1. Microelectronics Research Group, Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, and University of Crete, Physics Department (MRG), Heraklion 71110, Greece
InGaN and InAlN ternary alloy films, spanning the entire composition range, were grown successfully by radiofrequency plasma assisted molecular beam epitaxy and their properties were investigated by high resolution x-ray diffraction (HR-XRD), photoluminescence (PL), optical transmission and reflection spectroscopies.
Presentation: oral at E-MRS Fall Meeting 2005, Symposium A, by Eleftherios Iliopoulos
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-05-20 19:58 Revised: 2009-06-07 00:44
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