Properties of MBE-grown InN (0001) films
|Emmanouil Dimakis 2, Eleftherios Iliopoulos 2, Katerina Tsagaraki 2, Gladkov Peter 3, Philomela Komninou 1, Andreas Delimitis 1, Thomas Kehagias 1, Alexandros Georgakilas 2|
1. Dept. of Physics, Aristotle University of Thessaloniki, Thessaloniki 54 124, Greece
In-face InN films were grown heteroepitaxially on (0001) GaN/Al2O3 templates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). Films’ properties were investigated by high resolution x-ray diffraction, photoluminescence, atomic force microscopy, transmission electron microscopy, scanning electron microscopy and Hall effect measurements.
Presentation: oral at E-MRS Fall Meeting 2005, Symposium A, by Emmanouil Dimakis
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-05-20 19:26 Revised: 2009-06-07 00:44
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