Epitaxy Control and Characterization of InN, InN-based Ternary Alloys, and Their MQW-structures

Akihiko Yoshikawa 1,2,3Song-Bek Che Yoshihiro Ishitani Xinqiang Wang Wataru Terashima 

1. Chiba University, Department of Electronics and Mechanical Engineering, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
2. Chiba University, Center for Frontier Electronics and Photonics, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
3. Chiba University, InN-Project as a CREST-program of JST, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

Abstract

We have pointed out for the epitaxy of InN and InN-based ternary alloys that N-polarity growth regime is preferable than In-polarity one in the viewpoint of getting higher-quality epilayers as well as constructing fine structure InN-based heterojunctions. This situation is very much different from that of other typical III-nitrides of GaN, AlN and Ga(Al)-rich ternary/quaternary alloys including InGaN, where Ga- or Al- polarity is better than N-polarity. The reason for the different situation in epitaxy of InN-based III-nitrides is attributed to that of about 100 deg higher possible-epitaxy temperatures in N-polarity than In-polarity (~600 deg for N-polarity but ~500 deg for In polarity). The higher epitaxy temperatures result in both (a) much easier epitaxy control under around unity surface stoichiometry to avoid the appearance of In-droplets on the surface during growth and (b)better matching in epitaxy temperatures between InN-well and GaN and/or AlN-based barriers when fabricating InN-based nano-heterostructures.
In this paper, we report our recent results on the epitaxy of N-polarity InN-based ternary alloys of InGaN and AlInN both on GaN and InN underlayers. Further, we have investigated to fabricate InN-based nano-heterostructures including InN/GaN, InN/InGaN, and InN/AlInN MQWs under the N-polarity growth regime.
The InN-based epilayers and MQWs were characterized by HR-XRD, AFM, TEM, Hall and PL measurements. We have succeeded for the first time in fabricating very fine InN-based nano-heterostructures which were revealed by the clear satellite diffraction peaks and sharp hetero-interfaces by XRD and TEM, respectively.
Finally we conclude that the N-polarity growth regime is very important in the epitaxy of InN itself, InN-based ternary alloys and fine MQWs structures.

Legal notice
  • Legal notice:

    Copyrighted materials, (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced, stored in or introduced into a retrieval or caching system, or transmitted in any form or by any means (electronic, mechanical, photocopying, recording or otherwise), or for any purpose, without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: http://science24.com/paper/3667 must be provided.

 

Related papers
  1. Polarity determination of InN by using circular photogalvanic effect
  2. Recent advances and challenges in p-type doping of InN and InN-based novel nanostructures
  3. Effects of threading dislocations and other defects on reduction of band-edge photoluminescence in n-InN films

Presentation: invited oral at E-MRS Fall Meeting 2005, Symposium A, by Akihiko Yoshikawa
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-20 09:08
Revised:   2009-06-07 00:44
Google
 
Web science24.com
© 1998-2021 pielaszek research, all rights reserved Powered by the Conference Engine