LASER ASSISTED FORMATION OF SIC NANO-TIPS FOR FIELD EMISSION
APPLICATION
A.A. Evtukh, L.L. Fedorenko, V.G. Litovchenko, Yu.M. Litvin, M.M.
Yusupov. Institute of Semiconductors Physics, 45 Prospekt Nauki, Kiev,
Ukraine and A.P. Medvid* Riga Technical University, Latvia.
Nano-tips formation on a surface of a-SiC 6H: N (N[d]-N[a ]~
1-3^.10¹8 cm-3) by the N[2] laser (l =0.337 mm, t[p ]= 7 ns) focused
beam on air at room temperature was performed. Usually the focused
laser radiation forms a crater of a cone shape with the typical sizes
about several tens microns on the semiconductor or the metal surface
due to rapid spattering of the melted matter. In our experiments the
nano-tips formation is observed on the surface of 6H-SiC after laser
irradiation with intensity levels lower than threshold of visually (by
eyes) observed changes of surface. In this case the nano-tips is
submicron size. The average intensity of this threshold of LR
(<I[th]>) is the same for two kinds of operation mode and estimated as
5 GW/cm2. Results of the photoluminescence and studies of AFM in
friction mode speak in favor of the increase of nitrogen concentration
near the surface. The emission current was measured in the diode
structure. The emitter-anode spacing L was constant and equal to 7.5
mm. At our measurement conditions we hadn't observe of electron field
emission from monocrystalline SiC. But after laser modification of
surface and creation of nano-tips the field emission was enhanced
(threshold voltage - 370 V, effective work function - 4.65 eV). The
found out phenomenon can become a basis for development of
non-alternative cold technology of nano-size structures creation on a
surface of SiC. Laser assisted formation of SiC nano-tips is promising
for creation of electron field emission cathodes.

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