Localized donor states resonant with the conduction band in InN and GaN
Polish Academy of Sciences, Institute of High Pressure Physics (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland
This presentation is devoted to a comparative studies of a donor impurities contributing significantly to n-type conductivity in unintentionally doped GaN and InN binary nitrides.
Presentation: invited oral at E-MRS Fall Meeting 2005, Symposium A, by Tadeusz Suski
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-05-17 10:44 Revised: 2009-06-07 00:44
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