InN explained within chemical trends
|Louis F. J. Piper 2, Tim Veal 2, Paul H. Jefferson 2, Chris F. McConville 2, William J. Schaff 1|
1. Cornell University, 425 Philips Hall, Ithaca, NY 14853, United States
A few experimentally observed properties of wurtzite InN initially appear to be unusual and controversial. However, InN merely represents a material lying at the extreme of the band-edge endpoints and thus can be explained within existing chemical trends. Both the In and N act to pull the conduction band minimum (CBM) and valence band maximum down with respect to the universal Branch-point energy (EB), which lies close to the `average' mid-gap position of the semiconductor . In fact the CBM of InN lies ~ 0.9 eV below EB, resulting in electron accumulation , unlike for almost all III-V semiconductors where EB lies within the Γ-point band gap, except for InAs which also accumulates.
Presentation: poster at E-MRS Fall Meeting 2005, Symposium A, by Louis F. J. Piper
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-05-05 10:59 Revised: 2009-06-07 00:44
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