In the present work we studied the variation of Raman spectra in misfit layer semiconductor structure (PbS)_0.59TiS₂ under variation of laser power. The spectra were excited with 514.5 and 488.0 nm laser lines. At the low laser powers the spectra exhibited: (i) two softened (in comparison with TiS₂ crystal) phonons of TiS₂ host layers at 219 and 333 cm^-1; (ii) LO(Γ), 2LO and 3LO phonons from the incommensurate PbS layers at 203.5, 412 and 634 cm^-1, respectively; and (iii) a possible superposition mode of PbS and TiS₂ layers at 292 cm^-1. A process of the misfit’s surface oxidation was investigated under increase of both laser power and time of exposition of the samples under the laser irradiation. The novel wave numbers were observed related to PbO, TiO₂, PbO₂, PbSO₄, “PbO*PbSO₄” complexes, and to other oxysulfates at ~ 140, 183, 254, 280, 364, 391, 434, 511, 605 cm^-1. A nature is discussed of a peak at 151 cm^-1 appearing at high laser powers. In the low-frequency Raman spectra of the misfit (PbS)0.59TiS2 the peculiarities at 19, 73 and 95-96 cm-1 were observed associated with vibrations of the PbS layers.

The work was supported by the INTAS (Nr. 03-55-629) and RFBR (Gr. No. 04-02-16178).

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