Fe films of 150 nm deposited onto P-type Si(111) substrates were irradiated at room temperature (RT) with 300 KeV Xe⁺ ions with a dose of 5x10¹⁶ Xe⁺/cm². After Xe-ion beam mixing, the samples were annealed in a N₂ atmosphere at 850 ˚C for different times. The obtained samples were analyzed by using Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy and Photoluminescence (PL) techniques. The experimental results show that the Xe irradiation at RT leads to the formation only of the ε -FeSi phase, and after thermal annealing the Fe layer is transformed to a mixture of ε -FeSi, Α-FeSi₂ and β -FeSi₂ phases. The Raman signals for β -FeSi₂ are slightly shifted toward lower energies. A PL measurement at 12 K indicates a luminescence peak localized at the energy of about 0.81 eV corresponding to the band gap energy of β -FeSi₂ phase.

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