The novel dilute-nitride material system Ga(NAsP) can  be grown lattice-matched to (001) Si-substrate. The incorporation of N in the Ga(NAsP)-material allows for a significant reduction in the lattice constant, which leads on one side to a dislocation free deposition on Si. On the other side the specific conduction band formation process in these materials is used to realize a direct band gap semiconductor. By applying a variety of physical investigation techniques the high crystalline quality as well as the direct band gap character of the novel Ga(NAsP)-material system have been verified. Ga(NAsP)/(BGa)(AsP)-MQWH were grown on exact oriented (001) Si substrates embedded in thick (BGa)P separate confinement hetero-layers by metalorganic vapour phase epitaxy (MOVPE). The incorporation of B into GaP and Ga(AsP) allows for a precise strain management of the whole III/V laser stack towards the lattice constant of Si. The optoelectronic properties and first lasing characteristics of Ga(NAsP)-MQWH on (001) Si-substrate will be presented and discussed.

These results form the basis for a unique realization of  monolithic integration of III/V-based optoelectronic and Si-microelectronic functionalities in the near future. The challenges of this integration concept will be discussed and possible solutions will be presented.

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