The structure of dislocation clusters and related small-angle subgrain boundaries in block-casted multicrystalline silicon for photovoltaic application has been studied by means of synchrotron X-ray topography (XRT). For this purpose, samples sliced perpendicular and parallel to the growth direction have been investigated in reflection and transmission geometry, respectively.
During the growth process of the silicon ingot, the dislocation density increases. WB-XRT measurements revealed the formation of small-angle subgrain-boundaries. The subgrains have a slightly changed orientation related to a rotation of about 0.07 ° to 0.80 ° around an axis parallel to the growth direction. This tilt results from the high number of dislocations forming dislocation walls and clusters. The spacings between dislocations in such subgrain boundaries were found to be between 297 and 28 nm.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/30224 must be provided.

1. Up-scaling of crystal growth processes
2. Grain and Subgrain Boundaries in Multi-Crystalline Silicon