GaInNAs as a quaternary dilute nitride is promising alloy from application point of view due to possibility of extending the applicability of GaAs technology to longer wavelength using popular GaAs substrate. However epitaxial growth and characterization of GaInNAs layers have remained challenging. Phenomenon of nonuniformity of nitrogen and indium distribution along the growth direction occurs in discussed layers. In case of low dimensional structures such effect could cause step-like shape quantum wells. In this work the results of the high resolution X-ray diffraction (HRXRD) of 3xQWs GaInNAs/GaAs  heterostructures will be discussed. Samples were grown by atmospheric pressure metaloorganic vapour phase epitaxy (AP-MOVPE). Authors present difference in simulations of diffraction curves of homogeneous and step-like quantum wells and point out results of measurements suggested a splitting of the quantum wells. The model of step-like quantum is confirmed by transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS).

Acknowledgement
This work was co-financed by Polish Ministry of Science and Higher Education under the grant no. N N515 607539 and N N507 552938, by the European Union within European Regional Development Fund, through grant Innovative Economy (POIG.01.01.02-00-008/08-05), by Wroclaw University of Technology statutory grant and Slovak-Polish International Cooperation Program no. SK-PL-0017-09 & 0005-12. In addition, K.B. acknowledges the financial support from the European Union within European Social Fund.

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