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From wedges to pyramids. The influence of the precursor gas ratio on the surface morphology of MOCVD-ZnO

Fanni Lorenzo 1Silvan Nicolay 2Monica Morales Masis 1Christophe Ballif 1,2

1. EPFL STI IMT PVLAB (IMT), Breguet 2, Neuchâtel 2000, Switzerland
2. Centre Suisse d'Electronique et de Microtechnique (CSEM), Jaquet-Droz 1, Neuchâtel 2002, Switzerland

Abstract

Surface morphology is a key parameter for an effective light trapping schme in thin film solar cells. MetalOrganic Chemical Vapor Deposition (MOCVD) is a fast and flexible method that allows the deposition of transparent conductive oxides with custmized electrical, optical and morphological features. The control of film properties is done by properly tuning the deposition temperature and pressure, the total gas flow and the ratio between the flows of the precursor gases.

In this study we present non-intentionally doped Zinc Oxide films deposited using water and diethylzinc as gas precursors. The influence of the ratio between the flows of water and diethylzinc is analyzed by means of Hall effect measurements, Scanning Electron Microscope (SEM) and X-Ray Diffraction (XRD).We show how by increasing the water/diethylzinc ratio, the surface morphology varies from wedges (2 sides) to pyramids (3 sides). Finally a tentative growth model according to XRD measurements is proposed.

 

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Presentation: Poster at 15th Summer School on Crystal Growth - ISSCG-15, by Fanni Lorenzo
See On-line Journal of 15th Summer School on Crystal Growth - ISSCG-15

Submitted: 2013-05-22 12:21
Revised:   2013-05-23 17:12