Abstract: High purity silicon carbide (SiC) powder for growing semi-insulating SiC single crystal was synthesized using the chemical reaction between high purity carbon and silicon powder. The effects of reaction temperature on the phase composition, particle size, and yield of products were discussed. The phase composition, particle size, morphology of the products were investigated by X-ray diffraction (XRD), Malvern laser particle analyzer (MS2000) and scanning electron microscopy (SEM), respectively. The yield of products was calculated by removing the residual carbon and silicon. The results shown that with the increase of reaction temperature, the phase transition of production from βtoαwas found. Moreover, the particle size and the yield of production firstly increased with increasing the temperature and than decreased when the temperature was higher. The results of glow discharge mass spectroscopy (GDMS) indicated that the synthesized products can meet the requirement for semi-insulating SiC single crystal growth. Finally, the semi-insulating 4H-SiC single crystal were grown using SiC powder which was synthesized in our lab.

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