Semiconductor quantum dots (QDs) formed by Stranski-Krastanow growth mode has enabled the realization of highly-efficient optoelectronic devices such as QD lasers. Also, unique features of the QDs are promising for the development of solid state quantum information processing technologies. Particularly, III-nitride QDs are important for high-temperature operation of quantum information devices. In this presentation, we discuss our recent advances in site-controlled single GaN/AlGaN nanowire quantum dots. We developed MOCVD selective area growth of nanowires embedding QDs in order to control the site of GaN QDs. High-quality single GaN QDs with intense photoluminescence were successfully obtained together with the observation of a large biexciton binding-energy, fine structure splitting (FSS), and strong interaction with phonons in the single GaN QDs. Moreover, the presence of the excited states in a single GaN QDs were evidenced by means of photoluminescence excitation (PLE) measurements, which was led to realization of coherent control of excitons in the single GaN QDs.

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