Czochralski Growth of Indium Iodide 

Aleksandar G. Ostrogorsky 1Irina Nicoara 1Dimitru Nicoara 1Zhaopeng Xu 1Charles Bertorrello 1Michael Groza 2Arnold Burger 2

1. Illinois Institute of Technology, 10 West 33rd Street, Chicago, Il 60616, United States
2. Fisk University, Department of Physics, Materials Science and Applications Group, 1000 17th Ave. N., Nashville, TN 37208-305, United States


There has been only a small number of reported attempts to use the Czochralski process for growing the wide bandgap compound semiconductors, needed for the room temperature operated nuclear detectors.    The main difficulty is in the low chemical stability and high vapor pressure of the group II, V, VI and VII elements, leading to the off-stoichiometric composition, and various related defects.  Among the heavy metal halides, indium mono-iodide presents an interesting exception.   InI has a high disassociation energy and low relatively low vapor pressure, allowing for Czochralski pulling.   We will describe the procedures used for synthesis, zone refining, Czochralski growth and characterization of indium iodide.  


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Presentation: Invited oral at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, Topical Session 4, by Aleksandar G. Ostrogorsky
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-04-16 14:27
Revised:   2013-04-16 14:31
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