Bi₂Te_2.9Se_0.1 single crystal have been grown by bridgman  technique with the freezing interface temperature gradient 65^oC/cm and growth velocity 0.5 cm/hr. A parallel striations perpendicular to the ingot axis were observed on the top free surface of crystal, indicates layer growth mechanism is predominant among them.

1. PRESENTATION: Surface Characterization of Bi_{2}Te_{2.9}Se_{0.1} single crystals, Microsoft Office Document, 0MB

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